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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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SBAS20HT1G датащи(PDF) 1 Page - ON Semiconductor |
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SBAS20HT1G датащи(HTML) 1 Page - ON Semiconductor |
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1 / 3 page  © Semiconductor Components Industries, LLC, 2011 October, 2011 − Rev. 6 1 Publication Order Number: BAS20HT1/D BAS20HT1, SBAS20HT1G High Voltage Switching Diode Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Continuous Reverse Voltage VR 200 Vdc Repetitive Peak Reverse Voltage VRRM 200 Vdc Continuous Forward Current IF 200 mAdc Peak Forward Surge Current IFM(surge) 625 mAdc Repetitive Peak Forward Current IFRM 500 mA Non−Repetitive Peak Forward Current (Square Wave, TJ = 25°C prior to surge) t = 1 ms t = 1 ms t = 1 s IFSM 5.0 2.0 0.5 A THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR−5 Board* TA = 25°C Derate above 25°C PD 200 1.57 mW mW/°C Thermal Resistance Junction−to−Ambient RqJA 635 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *FR−5 Minimum Pad ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current (VR = 200 Vdc) (VR = 200 Vdc, TJ = 150°C) IR − − 1.0 100 mAdc Reverse Breakdown Voltage (IBR = 100 mAdc) V(BR) 250 − Vdc Forward Voltage (IF = 100 mAdc) (IF = 200 mAdc) VF − − 1000 1250 mV Diode Capacitance (VR = 0, f = 1.0 MHz) CD − 5.0 pF Reverse Recovery Time (IF = IR = 30 mAdc, RL = 100 W) trr − 50 ns http://onsemi.com HIGH VOLTAGE SWITCHING DIODE Device Package Shipping† ORDERING INFORMATION SOD−323 CASE 477 STYLE 1 1 CATHODE 2 ANODE MARKING DIAGRAM JR = Specific Device Code M = Date Code* G = Pb−Free Package 1 2 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. JR M G G BAS20HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SBAS20HT1G SOD−323 (Pb−Free) 3000 / Tape & Reel |
Аналогичный номер детали - SBAS20HT1G |
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Аналогичное описание - SBAS20HT1G |
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