ATP101_12 datasheet(2/7 Pages) SANYO

номер детали	ATP101

подробное описание детали	General-Purpose Switching Device Applications

PDF	7 Pages

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производитель	SANYO [Sanyo Semicon Device]

домашняя страница	https://www.sanyo-av.com/us/

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2 / 7 page

ATP101

No.A1646-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=--1mA, VGS=0V

--30

Zero-Gate Voltage Drain Current

IDSS

VDS=--30V, VGS=0V

--1

μA

Gate-to-Source Leakage Current

IGSS

VGS=±16V, VDS=0V

±10

μA

Cutoff Voltage

VGS(off)

VDS=--10V, ID=--1mA

--1.2

--2.6

Forward Transfer Admittance

| yfs |

VDS=--10V, ID=--13A

Static Drain-to-Source On-State Resistance

RDS(on)1

ID=--13A, VGS=--10V

mΩ

RDS(on)2

ID=--7A, VGS=--4.5V

mΩ

Input Capacitance

Ciss

VDS=--10V, f=1MHz

875

Output Capacitance

Coss

220

Reverse Transfer Capacitance

Crss

155

Turn-ON Delay Time

td(on)

See speciﬁed Test Circuit.

9.2

Rise Time

Turn-OFF Delay Time

td(off)

Fall Time

Total Gate Charge

VDS=--15V, VGS=--10V, ID=--25A

18.5

Gate-to-Source Charge

Qgs

3.2

Gate-to-Drain “Miller” Charge

Qgd

4.0

Diode Forward Voltage

VSD

IS=--25A, VGS=0V

--0.99

--1.5

Switching Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP101-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

PW=10μs

D.C.≤1%

P.G

50Ω

ID= --13A

RL=1.15Ω

VDD= --15V

VOUT

VIN

--10V

VIN

ATP101

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