TPIC2401 datasheet(2/10 Pages) TI1

2 / 10 page

TPIC2401

4CHANNEL COMMONSOURCE POWER DMOS ARRAY

SLIS049 − NOVEMBER 1996

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

absolute maximum ratings over operating case temperature range (unless otherwise noted)†

Drain-to-source voltage, VDS

60 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-to-source voltage, VGS

−9 V to 18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous drain current, each output, all outputs on, TC = 25°C

1.5 A

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed drain current, each output, IOmax, TC = 25°C (see Note 1 and Figure 7)

6 A

. . . . . . . . . . . . . . . . . . . .

Continuous gate-to-source zener diode current, TC = 25°C

±25 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed gate-to-source zener diode current, TC = 25°C

±250 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single-pulse avalanche energy, EAS, TC = 25°C (see Figures 4 and 6)

36 mJ

. . . . . . . . . . . . . . . . . . . . . . . . . . .

Continuous total power dissipation at (or below) TA = 25°C

1.7 W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power dissipation at (or below) TC = 75°C, all outputs on

15 W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating virtual junction temperature range, TJ

−40

°C to 150°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating case temperature range, TC

−40

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range, Tstg

−40

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%

electrical characteristics, TC = 25°C (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)DSX

Drain-to-source breakdown voltage

ID = 250 µA,

VGS = 0

VGS(th)

Gate-to-source threshold voltage

ID = 1 mA,

VDS = VGS,

1.5

2.05

2.2

VGS(th)match Gate-to-source threshold voltage matching

ID = 1 mA,

See Figure 5

VDS = VGS,

V(BR)GS

Gate-to-source breakdown voltage

IGS = 250

µA

V(BR)SG

Source-to-gate breakdown voltage

ISG = 250 µA

VDS(on)

Drain-to-source on-state voltage

ID = 1.5A,

See Notes 2 and 3

VGS = 10 V,

0.45

0.54

VF(SD)

Forward on-state voltage, source-to-drain

IS = 1.5A,

VGS = 0 V,

See Notes 2 and 3 and Figure 12

0.85

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

TC = 25°C

0.05

IDSS

Zero-gate-voltage drain current

VDS = 48 V,

VGS = 0

TC = 125°C

0.5

µA

IGSSF

Forward gate current, drain short circuited to

source

VGS = 15 V,

VDS = 0

200

IGSSR

Reverse gate current, drain short circuited to

source

VSG = 5 V,

VDS = 0

100

rDS(on)

Static drain-to-source on-state resistance

VGS = 10 V,

ID =1.5 A,

TC = 25°C

0.3

0.36

Ω

rDS(on)

Static drain-to-source on-state resistance

ID =1.5 A,

See Notes 2 and 3

and Figures 6 and 7

TC = 125°C

0.48

0.6

Ω

gfs

Forward transconductance

VDS = 15 V,

ID = 1 A,

See Notes 2 and 3 and Figure 9

0.9

1.15

Ciss

Short-circuit input capacitance, common source

180

225

Coss

Short-circuit output capacitance, common

source

VDS = 25 V,

f = 1 MHz,

VGS = 0,

See Figure 11

100

138

Crss

Short-circuit reverse transfer capacitance,

common source

f = 1 MHz,

See Figure 11

100

NOTES:

2. Technique should limit TJ − TC to 10°C maximum.

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

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