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FMS2303 датащи(PDF) 3 Page - Formosa MS

номер детали FMS2303
подробное описание детали  30V P-Channel Enhancement Mode MOSFET
PDF  8 Pages
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производитель  FORMOSA [Formosa MS]
домашняя страница  http://www.formosams.com
Logo FORMOSA - Formosa MS

FMS2303 датащи(HTML) 3 Page - Formosa MS

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Formosa MS
PARAMETER
Gate-body leakage current-forward
Gate threshold voltage
Static drain-source on-resistance
a
Intput capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
V
= 0V, I = -250uA
GS
D
V
= 20V, V
=0
GS
DS
V
=
, I = -250uA
DS
D
VGS
V
= -10V, I = -1.7A
GS
D
CONDITIONS
Symbol
BVDSS
IGSSF
VGS(th)
IDSS
Ciss
Td(on)
MIN.
-30
TYP.
MAX.
100
UNIT
V
nA
V
mΩ
V
pF
ns
Electrical characteristics (At T =25 C unless otherwise noted)
A
o
Drain-source breakdown voltage
V
= -15V,
R
=6
V
=-10V
DS
GEN
GS
Ω
R=15
,
L
Ω
SMD MOSFET
Zero gate voltage drain current
V
= -30V, V
= 0V
DS
GS
, T = 25 C
J
O
-1.0
μA
Gate-body leakage current-reverse
V
= -20V,
GS
DS
V=0
IGSSR
-100
nA
V
= -4.5V, I = -1.3A
GS
D
RDS(ON)
464
-1.0
32
STATIC
75
100
Diode Forward Voltage
V
=0V,
=25 C
GS
J
O
I = -1.25A, T
S
-1.4
DYNAMIC
Output capacitance
Coss
Crss
V
= -15V, V
= 0V,
f=1.0MHz
DS
GS
72
23
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
Q
gs
Q
gd
14.4
2.7
nC
V
= -15V, I = -1.7A
V
=-10.0V
DS
D
GS
Tr
Td(off)
Tf
17
40
5
Notes
a
Pulse test
pulse width
300us
duty cycle
2
:.
;
,
%
≦≦
VSD
FMS2303
Document ID
Issued Date
Revised Date
Revision
Page.
-3.0
60
75
-0.7
3.6
DS-231135
2011/03/10
2011/07/21
B
8



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