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FMS2301 датащи(PDF) 3 Page - Formosa MS

номер детали FMS2301
подробное описание детали  20V P-Channel Enhancement Mode MOSFET
PDF  8 Pages
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производитель  FORMOSA [Formosa MS]
домашняя страница  http://www.formosams.com
Logo FORMOSA - Formosa MS

FMS2301 датащи(HTML) 3 Page - Formosa MS

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Formosa MS
PARAMETER
Gate-body leakage current-forward
Gate threshold voltage
Static drain-source on-resistance
a
Intput capacitance
Reverse transfer capacitance
Turn-On Delay Time
Turn-Off Delay Time
V
= 0V, I = -250uA
GS
D
V
= 8V, V
=0
GS
DS
V
=
, I = -250uA
DS
D
VGS
V
= -4.5V, I = -2.8A
GS
D
CONDITIONS
Symbol
BVDSS
IGSSF
VGS(th)
IDSS
Ciss
Td(on)
MIN.
-20
TYP.
MAX.
100
UNIT
V
nA
V
mΩ
V
pF
ns
Electrical characteristics (At T =25 C unless otherwise noted)
A
o
Drain-source breakdown voltage
V
= -6.0V,
R
=6
V=-4.5V
DS
GEN
GS
Ω
R=6.0
,
L
Ω
SMD MOSFET
Zero gate voltage drain current
V
= -20V, V
= 0V
DS
GS
, T = 25 C
J
O
-1.0
μA
Gate-body leakage current-reverse
V= -8V,
GS
DS
V=0
IGSSR
-100
nA
V
= -2.5V, I = -2.0A
GS
D
RDS(ON)
510
-0.4
53
STATIC
110
150
Diode Forward Voltage
V
=0V,
=25 C
GS
J
O
I = -1.0A, T
S
-1.4
DYNAMIC
Output capacitance
Coss
Crss
V
= -15V, V
= 0V,
f=1.0MHz
DS
GS
53
17
Total gate charge
Gate-source charge
Gate-drain charge
Q
g
Q
gs
Q
gd
5.8
1.7
nC
V
= -6.0V, I = -2.8A
V=-4.5V
DS
D
GS
Tr
Td(off)
Tf
32
47
7
Notes
a
Pulse test
pulse width
300us
duty cycle
2
Guaranteed by design
not subject to production testing
:.
:
,
%,
,
.
≦≦
VSD
Document ID
Issued Date
Revised Date
Revision
Page.
-1.0
90
110
-0.7
1.2
FMS2301
DS-231129
2009/02/10
2011/07/21
C
8



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