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MCP1754 датащи(PDF) 21 Page - Microchip Technology

номер детали MCP1754
подробное описание детали  150 mA, 16V, High Performance LDO
PDF  42 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP1754 датащи(HTML) 21 Page - Microchip Technology

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© 2011 Microchip Technology Inc.
DS22276A-page 21
MCP1754/MCP1754S
5.0
APPLICATION CIRCUITS &
ISSUES
5.1
Typical Application
The MCP1754/MCP1754S is most commonly used as
a voltage regulator. It’s low quiescent current and low
dropout voltage make it ideal for many battery-powered
applications.
FIGURE 5-1:
Typical Application Circuit.
5.1.1
APPLICATION INPUT CONDITIONS
5.2
Power Calculations
5.2.1
POWER DISSIPATION
The internal power dissipation of the MCP1754/
MCP1754S is a function of input voltage, output
voltage and output current. The power dissipation, as
a result of the quiescent current draw, is so low, it is
insignificant (56.0 µA x VIN). The following equation
can be used to calculate the internal power dissipation
of the LDO.
EQUATION
The
maximum
continuous
operating
junction
temperature specified for the MCP1754/MCP1754S is
+150°C. To estimate the internal junction temperature
of the MCP1754/MCP1754S, the total internal power
dissipation is multiplied by the thermal resistance from
junction to ambient (R
θ
JA). The thermal resistance from
junction to ambient for the SOT23A pin package is
estimated at 336 °C/W.
EQUATION
The maximum power dissipation capability for a
package can be calculated given the junction-to-
ambient thermal resistance and the maximum ambient
temperature for the application. The following equation
can be used to determine the package maximum
internal power dissipation.
EQUATION
EQUATION
EQUATION
Package Type = SOT23
Input Voltage Range = 3.6V to 4.8V
VIN maximum = 4.8V
VOUT typical = 1.8V
IOUT = 50 mA maximum
MCP1754S
GND
VOUT
VIN
CIN
1µF Ceramic
COUT
1µF Ceramic
VOUT
VIN
3.6V to 4.8V
1.8V
IOUT
50 mA
P
LDO
V
IN MAX
)
()
V
OUT MIN
()
–
() I
OUT MAX
)
()
×
=
PLDO = LDO Pass device internal power dissipation
VIN(MAX) = Maximum input voltage
VOUT(MIN) = LDO minimum output voltage
T
JMAX
()
P
TOTAL
R
θ
JA
×
T
AMAX
+
=
TJ(MAX) = Maximum continuous junction
temperature
PTOTAL = Total device power dissipation
R
θ
JA = Thermal resistance from junction to ambient
TAMAX = Maximum ambient temperature
P
DMAX
()
T
JMAX
()
T
AMAX
()
–
()
R
θ
JA
---------------------------------------------------
=
PD(MAX) = Maximum device power dissipation
TJ(MAX) = Maximum continuous junction
temperature
TA(MAX) = Maximum ambient temperature
R
θ
JA = Thermal resistance from junction to ambient
T
JRISE
()
P
DMAX
()
R
θ
JA
×
=
TJ(RISE) = Rise in device junction temperature over
the ambient temperature
PD(MAX) = Maximum device power dissipation
R
θ
JA = Thermal resistance from junction to ambient
T
J
T
JRISE
()
T
A
+
=
TJ = Junction Temperature
TJ(RISE) = Rise in device junction temperature over
the ambient temperature
TA = Ambient temperature



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