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MCP1754 датащи(PDF) 21 Page - Microchip Technology |
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MCP1754 датащи(HTML) 21 Page - Microchip Technology |
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21 / 42 page ![]() © 2011 Microchip Technology Inc. DS22276A-page 21 MCP1754/MCP1754S 5.0 APPLICATION CIRCUITS & ISSUES 5.1 Typical Application The MCP1754/MCP1754S is most commonly used as a voltage regulator. It’s low quiescent current and low dropout voltage make it ideal for many battery-powered applications. FIGURE 5-1: Typical Application Circuit. 5.1.1 APPLICATION INPUT CONDITIONS 5.2 Power Calculations 5.2.1 POWER DISSIPATION The internal power dissipation of the MCP1754/ MCP1754S is a function of input voltage, output voltage and output current. The power dissipation, as a result of the quiescent current draw, is so low, it is insignificant (56.0 µA x VIN). The following equation can be used to calculate the internal power dissipation of the LDO. EQUATION The maximum continuous operating junction temperature specified for the MCP1754/MCP1754S is +150°C. To estimate the internal junction temperature of the MCP1754/MCP1754S, the total internal power dissipation is multiplied by the thermal resistance from junction to ambient (R θ JA). The thermal resistance from junction to ambient for the SOT23A pin package is estimated at 336 °C/W. EQUATION The maximum power dissipation capability for a package can be calculated given the junction-to- ambient thermal resistance and the maximum ambient temperature for the application. The following equation can be used to determine the package maximum internal power dissipation. EQUATION EQUATION EQUATION Package Type = SOT23 Input Voltage Range = 3.6V to 4.8V VIN maximum = 4.8V VOUT typical = 1.8V IOUT = 50 mA maximum MCP1754S GND VOUT VIN CIN 1µF Ceramic COUT 1µF Ceramic VOUT VIN 3.6V to 4.8V 1.8V IOUT 50 mA P LDO V IN MAX ) () V OUT MIN () – () I OUT MAX ) () × = PLDO = LDO Pass device internal power dissipation VIN(MAX) = Maximum input voltage VOUT(MIN) = LDO minimum output voltage T JMAX () P TOTAL R θ JA × T AMAX + = TJ(MAX) = Maximum continuous junction temperature PTOTAL = Total device power dissipation R θ JA = Thermal resistance from junction to ambient TAMAX = Maximum ambient temperature P DMAX () T JMAX () T AMAX () – () R θ JA --------------------------------------------------- = PD(MAX) = Maximum device power dissipation TJ(MAX) = Maximum continuous junction temperature TA(MAX) = Maximum ambient temperature R θ JA = Thermal resistance from junction to ambient T JRISE () P DMAX () R θ JA × = TJ(RISE) = Rise in device junction temperature over the ambient temperature PD(MAX) = Maximum device power dissipation R θ JA = Thermal resistance from junction to ambient T J T JRISE () T A + = TJ = Junction Temperature TJ(RISE) = Rise in device junction temperature over the ambient temperature TA = Ambient temperature |
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