TIL920, TIL921, TIL922, TIL920A, TIL921A, TIL922A

TIL920B, TIL921B, TIL922B

SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS

SOOS032−D3908, FEBRUARY 1992

POST OFFICE BOX 655303

2

schematic diagrams

1

2

A/K

K/A

4

3

E

C

1

2

1 A/K

1 K/A

8

7

1E

1C

3

4

2 A/K

2 K/A

6

5

2E

2C

1

2

1A/K

1K/A

16

15

1E

1C

3

4

2A/K

2K/A

14

13

2E

2C

5

6

3A/K

3K/A

12

11

3E

3C

7

8

4A/K

4K/A

10

9

4E

4C

TIL920

(TOP VIEW)

TIL921

(TOP VIEW)

TIL922

(TOP VIEW)

Input-to-output voltage (see Note 1)

±7.5 kV peak or dc (±5.3 kV rms)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-emitter voltage (see Note 2)

35 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-collector voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode continuous forward current at (or below) 25

°C free-air temperature (see Note 3)

±50 mA

. . . . . .

Continuous power dissipation at (or below) 25

°C free-air temperature:

Phototransistor (see Note 4)

150 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode plus phototransistor per channel (see Note 5)

200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

−55

°C to 100°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage temperature range

−55

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

NOTES: 1. This rating applies for sine-wave operation at 50 or 60 Hz. Service capability is verified by testing in accordance with UL requirements.

2. This value applies when the base-emitter diode is open circuited.

3. Derate linearly to 100

°C free-air temperature at the rate of 0.67 mA/°C.

4. Derate linearly to 100

°C free-air temperature at the rate of 2 mW/°C.

5. Derate linearly to 100

°C free-air temperature at the rate of 2.67 mW/°C.

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO Collector-emitter breakdown voltage

IC = 0.5 mA,

IF = 0

35

V

V(BR)ECO Emitter-collector breakdown voltage

IC = 100 µA,

IF = 0

7

V

IC(off)

Off-state collector current

VCE = 24 V,

IF = 0

100

nA

Current

TIL920, TIL921, TIL922

20%

CTR†

transfer

TIL920A, TIL921A, TIL922A

IF = 5 mA,

VCE = 5 V

50%

ratio

TIL920B, TIL921B, TIL922B

100%

VF†

Input diode static forward voltage

IF = 20 mA

1.4

V

VCE(sat)†

Collector-emitter saturation voltage

IF = 5 mA,

IC = 1 mA

0.4

V

Cio

Input-to-output capacitance

Vin-out = 0,

f = 1 MHz,

See Note 6

1

pF

rio

Input-to-output internal resistance

Vin-out = ±1 kV, See Note 6

1011

Ω

IC(on)1

IC(on)2

On-state collector current symmetry ratio

(see Note 7)

VCE = 5 V,

IF = 5 mA

1

3

† These parameters apply to either direction of the input current.

NOTES: 6. These parameters are measured between all input-diode leads shorted together and all phototransistor leads shorted together.

7. The higher of the two values of IC(on) generated by the two diodes is taken as IC(on)1.