Dx_SEL

HPDA

HPDB

VDD

OE

GND

AUXA (p)

AUXA (n)

AUXB (p)

AUXB (n)

DAz (p)

DAz (n)

DBz (p)

DBz (n)

SEL

SEL

SEL

HD3SS212

SEL = 0

SEL = 1

4

4

4

4

4

4

(z = 0,1, 2or3)

HPDC

DCz (p)

DCz (n)

AUXC (p)

AUXC (n)

SEL = 1

SEL = 0

SEL = 1

SEL = 0

125kW

HD3SS212

SLAS822 A – DECEMBER 2011 – REVISED MARCH 2012

www.ti.com

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

ORDERING INFORMATION

PART NUMBER

PART MARKING

PACKAGE

HD3SS212ZQER

HD3SS212

48-Ball u*BGA (ZQE)

HD3SS212ZQET

Figure 2. HD3SS212 Functional Block Diagram

2

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