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AL8807MP-13 датащи(PDF) 2 Page - Diodes Incorporated

номер детали AL8807MP-13
подробное описание детали  HIGH EFFICIENCY LOW EMI 36V 1A BUCK LED DRIVER
PDF  21 Pages
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производитель  DIODES [Diodes Incorporated]
домашняя страница  http://www.diodes.com
Logo DIODES - Diodes Incorporated

AL8807MP-13 датащи(HTML) 2 Page - Diodes Incorporated

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AL8807
HIGH EFFICIENCY LOW EMI 36V 1A BUCK LED DRIVER
AL8807
Document number: DS35281 Rev. 4 - 2
2 of 21
www.diodes.com
June 2012
© Diodes Incorporated
Pin Descriptions
Pin Name
Pin Number
Descriptions
SOT25
MSOP-8EP
SW
1
5, 6
Switch Pin. Connect inductor/freewheeling diode here, minimizing track length at this pin to
reduce EMI.
GND
2
2, 3
GND Pin
CTRL
3
4
Dimming and On/Off Control Input.
•
Leave floating for normal operation.
(VCTRL = VREF = 2.5V giving nominal average output current IOUTnom = 0.1/RS)
•
Drive to voltage below 0.4V to turn off output current
•
Drive with DC voltage (0.5V < VCTRL < 2.5V) to adjust output current from 20% to
100% of IOUTnom
•
A PWM signal (low level
≤ 0.4V and high level > 2.6; transition times less than 1us)
allows the output current to be adjusted below the level set by the resistor connected
to SET input pin.
SET
4
1
Set Nominal Output Current Pin. Configure the output current of the device.
VIN
5
8
Input Supply Pin. Must be locally decoupled to GND with > 2.2µF X7R ceramic capacitor –
see applications section for more information.
EP
-
EP
Exposed pad/TAB connect to GND and thermal mass for enhanced thermal impedance.
Should not be used as electrical ground conduction path.
N/C
-
7
no connection
Absolute Maximum Ratings
Symbol
Parameter
Ratings
Unit
ESD HBM
Human Body Model ESD Protection
2.5
kV
ESD MM
Machine Model ESD Protection
200
V
VIN
Continuous VIN pin voltage relative to GND
-0.3~40
V
VSW
SW voltage relative to GND
-0.3~40
V
VCTRL
CTRL pin input voltage
-0.3 ~ 6
V
ISW-RMS
DC or RMS Switch current
SOT25
1.25
A
MSOP-8EP
1.6
ISW-PK
Peak Switch current (<10%)
2.5
A
TJ
Junction Temperature
150
°C
TLEAD
Lead Temperature Soldering
300
°C
TST
Storage Temperature Range
-65 to +150
°C
Caution:
Stresses greater than the 'Absolute Maximum Ratings' specified above, may cause permanent damage to the device. These are stress ratings only;
functional operation of the device at these or any other conditions exceeding those indicated in this specification is not implied. Device reliability may
be affected by exposure to absolute maximum rating conditions for extended periods of time.
Semiconductor devices are ESD sensitive and may be damaged by exposure to ESD events. Suitable ESD precautions should be taken when
handling and transporting these devices.
Recommended Operating Conditions
Symbol
Parameter
Min
Max
Unit
VIN
Operating Input Voltage relative to GND
6.0
36
V
VCTRLH
Voltage High for PWM dimming relative to GND
2.6
5.5
V
VCTRLDC
Voltage range for 20% to 100% DC dimming relative to GND
0.5
2.5
V
VCTRLL
Voltage Low for PWM dimming relative to GND
0
0.4
V
fSW
Maximum switching frequency
1
MHz
ISW
Continuous switch current
SOT25
1
A
MSOP-8EP
1.3
TJ
Junction Temperature Range
-40
125
°C



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