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SPX1004N датащи(PDF) 2 Page - Sipex Corporation |
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SPX1004N датащи(HTML) 2 Page - Sipex Corporation |
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2 / 5 page ![]() 2 Date: 5/25/04 SPX1004 1.2V/2.5V Micropower Voltage Reference © Copyright 2004 Sipex Corporation Electrical characteristics are guaranteed over full junction tepmerature range (0 °C to 70°C). Ambient tepmerature must be derated based on power dissipation and package thermal characteristics. SPX1004-1.2V SPX1004-2.5V PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS Reverse breakdown I Z=100µA, TJ=25°C 1.231 1.235 1.239 2.480 2.500 2.520 V 0°C≤T A≤70°C 1.225 1.235 1.245 2.470 2.500 2.530 Ave Temp. Coeff. I min≤IZ≤20mA 20 60 ppm/ °C Min Operating Current 4 10 12 20 µA Reverse Breakdown I min≤IZ≤1mA 0.5 1 0.5 1 mV Votlage Change over temperature 0.5 1.5 0.5 1.5 with Current 1mA≤I Z≤20mA 6.5 10 6.5 10 over temperature 6.5 20 6.5 20 Reverse Dynamic I Z=100µA, f=25Hz 0.2 0.6 0.8 0.9 Ω Impedance over temperature 1 1.5 1.5 Wide Band Noise I Z=100µA, 10Hz≤f≤10kHz 60 120 µV Long Term Stability I Z=100µA, TA=25°C±0.1°C2060 ppm/ kHr Operating Temp Range 0 70 0 70 °C ABSOLUTE MAXIMUM RATINGS Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Forward Current (I AK).....................................................10mA Reverse Current (I KA).....................................................30mA Lead Temperature (soldering, 10 seconds).................300°C Storage Temperature Range.......................-65°C to +150°C Junction Temperature..................................................150°C Continuous Power Dissipation (P D) TO-92.........................................................775mW SOIC-8.......................................................750mW SOT-89.....................................................1000mW VK 015 304560 7590 105 -10 0.5 5000 0 00 0.07 mV/¡C 0.003 %/¡C 27 ppm/¡C TC in mV/¡C = TC in % /¡C = ˘VKA (mV) ˘T A ˘T A ˘VKA at 25¡C ˘VKA x 100 () TC in ppm/¡C = ˘T A ˘VKA at 25¡C ˘VKA x106 () ppm % mV Junction Temperature (¡C) Figure 2. V REF vs Temperature for 2.5V Version TYPICAL THERMAL RESISTANCES PACKAGE 0 JA 0 JA TYPICAL DERATING TO-92 160°C/W 80°C/W 6.3 mW/°C SOIC-8 175°C/W 45°C/W 5.7mW/°C SOT-89 110°C/W 8°C/W 9.1mW/°C ELECTRICAL CHARACTERISTICS |
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