Analog Integrated Circuit Device Data

Freescale Semiconductor

13

33984

ELECTRICAL CHARACTERISTICS

DYNAMIC ELECTRICAL CHARACTERISTICS

POWER OUTPUT TIMING (CONTINUED)

Over-current Detection Blanking Time (OCLT[1:0])

00

01

10

11

108

7.0

0.8

0.08

155

10

1.2

0.15

202

13

1.6

0.25

ms

Over-current High Detection Blanking Time

1.0

10

20

μs

CS to CSNS Valid Time(22)

–

–

10

μs

HS1 Switching Delay Time (OSD[2:0])

000

001

010

011

100

101

110

111

–

55

110

165

220

275

330

385

0

75

150

225

300

375

450

525

–

95

190

285

380

475

570

665

ms

HS0 Switching Delay Time (OSD[2:0])

000

001

010

011

100

101

110

111

–

–

110

110

220

220

330

330

0

0

150

150

300

300

450

450

–

–

190

190

380

380

570

570

ms

Watchdog Timeout (WD[1:0])(23)

00

01

10

11

434

207

1750

875

620

310

2500

1250

806

403

3250

1625

ms

Notes

22.

Time necessary for the CSNS to be within ±5% of the targeted value.

23.

Watchdog timeout delay measured from the rising edge of WAKE to RST from a sleep-state condition to output turn-ON with the output

watchdog timeouts.

Table 5. Dynamic Electrical Characteristics (continued)

Characteristics noted under conditions 4.5 V

≤ V

Characteristic

Symbol

Min

Typ

Max

Unit