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TLE4207G датащи(PDF) 8 Page - Siemens Semiconductor Group

номер детали TLE4207G
подробное описание детали  1-A Dual-HBD (Dual-Half-Bridge Driver)
PDF  14 Pages
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производитель  SIEMENS [Siemens Semiconductor Group]
домашняя страница  http://www.siemens.com/
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TLE4207G датащи(HTML) 8 Page - Siemens Semiconductor Group

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TLE 4207
Semiconductor Group
8
1998-02-01
Outputs OUT1-2
Saturation Voltages
Source (upper)
I
OUT = – 0.2 A
V
SAT U
–
0.85 1.15
V
T
j = 25 °C
Source (upper)
I
OUT = – 0.4 A
V
SAT U
–
0.90 1.20
V
T
j = 25 °C
Sink (upper)
I
OUT = – 0.8 A
V
SAT U
–
1.10 1.50
V
T
j = 25 °C
Sink (lower)
I
OUT = 0.2 A
V
SAT L
–
0.15 0.23
V
T
j = 25 °C
Sink (lower)
I
OUT = 0.4 A
V
SAT L
–
0.25 0.40
V
T
j = 25 °C
Sink (lower)
I
OUT = 0.8 A
V
SAT L
–
0.45 0.75
V
T
j = 25 °C
Total Drop
I
OUT = 0.2 A
V
SAT
–1
1.4
V
V
SAT = VSAT U + VSAT L
Total Drop
I
OUT = 0.4 A
V
SAT
–1.2
1.7
V
V
SAT = VSAT U + VSAT L
Total Drop
I
OUT = 0.8 A
V
SAT
–1.6
2.5
V
V
SAT = VSAT U + VSAT L
Clamp Diodes
Forward voltage; upper
V
FU
–1
1.5
V
I
F = 0.4 A
Upper leakage current
I
LKU
––
5
mA
I
F = 0.4 A
1)
Forward voltage; lower
V
FL
–0.9
1.4
V
I
F = 0.4 A
Notes see page 10.
Electrical Characteristics (cont’d)
8 V <
V
S < 18 V; INH = High; IOUT1-2 = 0 A; – 40 °C < Tj < 150 °C;
unless otherwise specified
Parameter
Symbol
Limit Values
Unit Test Condition
min.
typ. max.



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