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AFT09MS031N датащи(PDF) 3 Page - Freescale Semiconductor, Inc

номер детали AFT09MS031N
подробное описание детали  RF Power LDMOS Transistors
PDF  21 Pages
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производитель  FREESCALE [Freescale Semiconductor, Inc]
домашняя страница  http://www.freescale.com
Logo FREESCALE - Freescale Semiconductor, Inc

AFT09MS031N датащи(HTML) 3 Page - Freescale Semiconductor, Inc

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AFT09MS031NR1 AFT09MS031GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA =25°C unless otherwise noted) (continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Crss
—
2.1
—
pF
Output Capacitance
(VDS = 13.6 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc)
Coss
—
63
—
pF
Input Capacitance
(VDS = 13.6 Vdc, VGS =0 Vdc ± 30 mV(rms)ac @ 1 MHz)
Ciss
—
140
—
pF
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31W,f= 870 MHz
Common--Source Amplifier Power Gain
Gps
16.0
17.2
18.5
dB
Drain Efficiency
ηD
68.0
71.0
—
%
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA)
Frequency
(MHz)
Signal
Type
VSWR
Pout
(W)
Test Voltage, VDD
Result
870
CW
>65:1 at all Phase Angles
54
(3 dB Overdrive)
17
No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.



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