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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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LT3757 датащи(PDF) 3 Page - Linear Technology |
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LT3757 датащи(HTML) 3 Page - Linear Technology |
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3 / 36 page  LTC3787 3 3787fc ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the specified operating junction temperature range, otherwise specifications are at TA = 25°C, VBIAS = 12V, unless otherwise noted (Note 2). SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Main Control Loop VBIAS Chip Bias Voltage Operating Range 4.5 38 V VFB Regulated Feedback Voltage ITH = 1.2V (Note 4) l 1.188 1.200 1.212 V IFB Feedback Current (Note 4) ±5 ±50 nA VREFLNREG Reference Line Voltage Regulation VBIAS = 6V to 38V 0.002 0.02 %/V VLOADREG Output Voltage Load Regulation (Note 4) Measured in Servo Loop; ΔITH Voltage = 1.2V to 0.7V l 0.01 0.1 % Measured in Servo Loop; ΔITH Voltage = 1.2V to 2V l –0.01 –0.1 % gm Error Amplifier Transconductance ITH = 1.2V 2 mmho IQ Input DC Supply Current Pulse-Skipping or Forced Continuous Mode Sleep Mode Shutdown (Note 5) RUN = 5V; VFB = 1.25V (No Load) RUN = 5V; VFB = 1.25V (No Load) RUN = 0V 1.2 135 8 300 20 mA μA μA UVLO INTVCC Undervoltage Lockout Thresholds VINTVCC Ramping Up VINTVCC Ramping Down l l 3.6 4.1 3.8 4.3 V V VRUN RUN Pin ON Threshold VRUN Rising l 1.18 1.28 1.38 V VRUNHYS RUN Pin Hysteresis 100 mV IRUNHYS RUN Pin Hysteresis Current VRUN > 1.28V 4.5 μA IRUN RUN Pin Current VRUN < 1.28V 0.5 μA ISS Soft-Start Charge Current VSS = GND 7 10 13 μA VSENSE1,2(MAX) Maximum Current Sense Threshold VFB = 1.1V, ILIM = INTVCC VFB = 1.1V, ILIM = Float VFB = 1.1V, ILIM = GND l l l 90 68 42 100 75 50 110 82 56 mV mV mV VSENSE(MATCH) Matching Between VSENSE1(MAX) and VSENSE2(MAX) VFB = 1.1V, ILIM = INTVCC VFB = 1.1V, ILIM = Float VFB = 1.1V, ILIM = GND l l l –12 –10 –9 0 0 0 12 10 9 mV mV mV VSENSE(CM) SENSE Pins Common Mode Range (BOOST Converter Input Supply Voltage VIN) 2.5 38 V ISENSE1,2+ SENSE+ Pin Current VFB = 1.1V, ILIM = Float 200 300 μA ISENSE1,2– SENSE– Pin Current VFB = 1.1V, ILIM = Float ±1 μA tr(TG1,2) Top Gate Rise Time CLOAD = 3300pF (Note 6) 20 ns tf(TG1,2) Top Gate Fall Time CLOAD = 3300pF (Note 6) 20 ns tr(BG1,2) Bottom Gate Rise Time CLOAD = 3300pF (Note 6) 20 ns tr(BG1,2) Bottom Gate Fall Time CLOAD = 3300pF (Note 6) 20 ns RUP(TG1,2) Top Gate Pull-Up Resistance 1.2 Ω RDN(TG1,2) Top Gate Pull-Down Resistance 1.2 Ω RUP(TG1,2) Bottom Gate Pull-Up Resistance 1.2 Ω RDN(TG1,2) Bottom Gate Pull-Down Resistance 1.2 Ω tD(TG/BG) Top Gate Off to Bottom Gate On Switch-On Delay Time CLOAD = 3300pF (Each Driver) 70 ns tD(BG/TG) Bottom Gate Off to Top Gate On Switch-On Delay Time CLOAD = 3300pF (Each Driver) 70 ns DFBG1,2(MAX) Maximum BG Duty Factor 96 % tON(MIN) Minimum BG On-Time (Note 7) 110 ns |
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