FMMT6520

Document Number: DS33123 Rev. 3 - 2

2 of 4

www.diodes.com

August 2011

© Diodes Incorporated

A Product Line of

Diodes Incorporated

FMMT6520

Characteristic

Symbol

Value

Unit

Collector-Base Voltage

-350

V

Collector-Emitter Voltage

-350

V

Emitter-Base Voltage

-5

V

Continuous Collector Current

-500

mA

Characteristic

Symbol

Value

Unit

Power Dissipation

(Note 4)

330

mW

Thermal Resistance, Junction to Ambient

(Note 4)

379

°C/W

Thermal Resistance, Junction to Lead

(Note 5)

350

°C/W

Operating and Storage Temperature Range

-55 to +150

°C

Notes:

4. For a device surface mounted FR4 PCB with minimum recommended pad layout; high coverage of single sided 1 oz copper, in still air conditions; the

device is measured when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (at the end of the collector lead).

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

-350

V

Collector-Emitter Breakdown Voltage (Note 6)

-350

V

Emitter-Base Breakdown Voltage

-5

V

Collector Cutoff Current

-50

nA

Emitter Cutoff Current

-50

nA

Static Forward Current Transfer Ratio

(Note 6)

20

30

30

20

15

200

200

Collector-Emitter Saturation Voltage

(Note 6)

-300

-350

-500

-1000

mV

mV

mV

mV

Base-Emitter Saturation Voltage(Note 6)

-750

-850

-900

mV

Base-Emitter Turn-On Voltage(Note 6)

-2.0

V

Output Capacitance

6

pF

Transition Frequency

50

MHz

f = 20MHz

Note:

6. Measured under pulsed conditions. Pulse width