2DB1132P/Q/R

Document number: DS31142 Rev: 5 - 2

3 of 6

www.diodes.com

September 2011

© Diodes Incorporated

2DB1132P/Q/R

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

Collector-Base Breakdown Voltage

-40

-

-

V

Collector-Emitter Breakdown Voltage (Note 6)

-32

-

-

V

Emitter-Base Breakdown Voltage

-5

-

-

V

Collector Cut-off Current

-

-

-0.5

µA

Emitter Cut-off Current

-

-

-0.5

µA

Static Forward Current Transfer

Ratio (Note 6)

2DB1132P

82

-

180

-

2DB1132Q

120

270

2DB1132R

180

390

Collector-Emitter saturation Voltage (Note 6)

-

-125

-500

mV

Transition frequency

-

190

-

MHz

Output Capacitance

-

12

30

pF

Notes:

6. Measured under pulsed conditions. Pulse width = 300

µs. Duty cycle

≤ 2%

Electrical Characteristics

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0

0.001

0.01

0.1

1

10

100

T = -55°C

A

T = 25°C

A

T = 85°C

A

T = 150°C

A

V

= -3V

CE

200

300

400

500