SB540EB-G datasheet(2/3 Pages) COMCHIP

номер детали	SB540EB-G

подробное описание детали	ESD Leaded Schottky Barrier Rectifiers

PDF	3 Pages

Scroll/Zoom	100%

производитель	COMCHIP [Comchip Technology]

домашняя страница	http://www.comchiptech.com

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RATING AND CHARACTERISTIC CURVES (

)

SB520E-G Thru. SB5100E-G

Page 2

QW-BB043

REV:A

Fig.1 Forward Current Derating Curve

Lead Temperature (

175

Fig.2 Maximum Non-repetitive Peak

Forward Surge Current

Number of Cycles at 60Hz

Instantaneous Forward Voltage (V)

100

125

2.0

4.0

6.0

Fig.4A Typical Reverse Characteristics

Percent of Rated Peak Reverse Voltage (%)

150

Fig.5 Typical Junction Capacitance per leg

Reverse Voltage (V)

ESD Leaded Schottky Barrier Rectifiers

5.0

3.0

1.0

Comchip Technology CO., LTD.

100

200

150

100

SB520E-G ~ SB545E-G

SB550E

~ SB5100E

-G

TL=110°C

8.3mS single half sine-wave

(JEDEC Method)

TJ=25°C

TJ=100°C

SB520

~ SB545E

E-G

-G

100

120

140

100

1.0

0.1

0.01

0.001

TJ=125°C

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.1

0.01

SB520E

~ SB545E

-G

SB550E

~ SB560E

-G

SB580E

~ SB5100E

-G

0.1

1.0

100

1,000

10,000

100

TJ=25°C

f=1.0MHz

Vsig=50mVp-p

Fig.4B Typeical Reverse Characteristic

Percent of Rated Peak Reverse Voltage ( %)

SB550E

~ SB5100E

-G

TJ=25°C

TJ=75°C

TJ=125°C

100

TJ=150°C

SB520E-G ~ SB545E-G

SB550E-G ~ SB5100E-G

single phase half wave 60Hz

resistive or inductive load

3.75”(9.5mm) lead length

Fig.3 Typical Instantaneous Forward

Characteristics

Comchip

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