CDST116-G datasheet(1/2 Pages) COMCHIP

номер детали	CDST116-G

подробное описание детали	SMD Switching Diode

PDF	2 Pages

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производитель	COMCHIP [Comchip Technology]

домашняя страница	http://www.comchiptech.com

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CDST116-G

RoHS Device

SMD Switching Diode

QW-B0029

Page 1

REV:A

Features

-Low leakage current applications.

-Medium speed switching times.

Polarity:

Marking: JV

Dimensions in inches and (millimeter)

Parameter

Value

Unit

Maximum Ratings (at Ta=25°C unless otherwise noted)

Peak repetitive peak reverse voltage

Working peak reverse voltage

DC blocking voltage

Forward continuous current

Power dissipation

Junction temperature

Storage temperature

VRRM

VRWM

VR

IFM

PD

TJ

TSTG

t

75

215

250

150

-55 to +150

V

mA

mW

OC

SOT-23

3

1

2

0.119(3.00)

0.110(2.80)

0.056(1.40)

0.047(1.20)

0.083(2.10)

0.066(1.70)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

0.006(0.15)

0.002(0.05)

0.103(2.60)

0.086(2.20)

0.006(0.15) max

0.007(0.20) min

Symbol

Parameter

Conditions

Min

Max

Unit

Electrical Characteristics (at Ta=25°C unless otherwise noted)

Reverse breakdown voltage

Forward voltage

Reverse current

Capacitance between terminals

Reverse recovery time

IR=100μA

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=75V

VR=0V, f=1MHz

IF=IR=10mA, Irr=0.1×IR,

RL=100Ω

V(BR)R

VF1

VF2

VF3

VF4

IR

CT

trr

75

V

0.9

1

1.1

1.25

5

3

V

μA

pF

nS

Typ.

V

2

Symbol

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