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TIP42CG-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали TIP42CG-TN3-R
подробное описание детали  PNP EPITAXIAL PLANAR TRANSISTOR
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

TIP42CG-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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TIP42C
PNP PLANAR TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R203-007.E
ABSOLUTE MAXIMUM RATING (unless otherwise specified )
PARAMETER
SYMBOL
RATINGS
UNIT
Collector Base Voltage
VCBO
-100
V
Collector to Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current (DC)
IC
-6
A
Collector Current (Pulse)
IC
-10
A
Base Current
IB
-2
A
Collector Dissipation (TC=25°C)
TO-220/TO-263
PC
65
W
TO-220F
22
TO-252
20
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TC=25°C)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
Collector-Emitter Breakdown Voltage (Note)
BVCEO
IC=-30mA, IB=0
-100
V
Collector Cutoff Current
ICEO
VCE=-60V, IB=0
-0.7
mA
Collector Cutoff Current
ICES
VCE=-100V, VEB=0
-400
μA
Emitter Cutoff Current
IEBO
VBE=-5V, IC=0
-1
mA
Collector-Emitter Saturation Voltage (Note)
VCE(SAT) IC=-6A, IB=-600mA
-1.5
V
Base-Emitter on Voltage (Note)
VBE(ON)
VCE=-4V, IC=-6A,
-2.0
V
DC Current Gain (Note)
hFE
VCE=-4V, IC=-300mA
30
VCE=-4V, IC=-3A
15
75
Current Gain Bandwidth Product
fT
VCE=-10V, IC=-500mA, f=1MHz
3
MHz
Note: Pulse Test: PW≤300μs, Duty Cycle≤2%



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