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FS30ASJ-2 датащи(PDF) 3 Page - Mitsubishi Electric Semiconductor

номер детали FS30ASJ-2
подробное описание детали  HIGH-SPEED SWITCHING USE
PDF  4 Pages
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производитель  MITSUBISHI [Mitsubishi Electric Semiconductor]
домашняя страница  http://www.mitsubishichips.com
Logo MITSUBISHI - Mitsubishi Electric Semiconductor

FS30ASJ-2 датащи(HTML) 3 Page - Mitsubishi Electric Semiconductor

  FS30ASJ-2 Datasheet HTML 1Page - Mitsubishi Electric Semiconductor FS30ASJ-2 Datasheet HTML 2Page - Mitsubishi Electric Semiconductor FS30ASJ-2 Datasheet HTML 3Page - Mitsubishi Electric Semiconductor FS30ASJ-2 Datasheet HTML 4Page - Mitsubishi Electric Semiconductor  
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Feb.1999
MITSUBISHI Nch POWER MOSFET
FS30ASJ-2
HIGH-SPEED SWITCHING USE
0
10
20
30
40
50
02468
10
TC = 25
°C
VDS = 10V
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
02468
10
ID = 50A
TC = 25
°C
Pulse Test
30A
10A
102
3
5
7
103
2
3
5
7
104
2
3
2
5
7
100 2101
35 7
35 7
2
102
35 7
2 3
2
Ciss
Coss
Crss
Tch = 25
°C
f = 1MHZ
VGS = 0V
100
101
23 4 5 7
102
23 4 5 7
101
102
2
3
4
5
7
103
2
3
4
5
7
td(off)
td(on)
tr
Tch = 25
°C
VDD = 50V
VGS = 10V
RGEN = RGS = 50
Ω
tf
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE VGS (V)
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE VDS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT ID (A)
100
101
23 4 5 7
102
23 4 5 7
100
101
2
3
4
5
7
102
2
3
4
5
7
TC = 25
°C
75
°C
125
°C
VDS = 10V
Pulse Test
0
20
40
60
80
100
100
35 7
2
101
35 7
2
102
35 7
23
VGS = 4V
10V
TC = 25
°C
Pulse Test



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