PRELIMINARY

PRELIMINARY

DS-CPC3710-R00D

1

CPC3710

N-Channel Depletion-Mode FET

RoHS

2002/95/EC

Pb

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

250V

P

10



220mA

SOT-89

Applications

Features

Description

Ordering Information

Package Pinout

 max. at 25ºC

P

The CPC3710 is an N-channel, depletion-mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance,

for use in high-power applications. The CPC3710

is a highly reliable FET device that has been used

extensively in Clare’s solid state relays for industrial

and telecommunications applications.

This device excels in power applications requiring

low drain-source resistance, particularly in cold

environments such as automotive ignition modules.

The CPC3710 offers a low, 10

 maximum, on-state

resistance at 25ºC.

The CPC3710 has a minimum breakdown voltage

of 250V

As with all MOS devices, the FET structure prevents

thermal runaway and thermal-induced secondary

breakdown.

(SOT-89)

G

D

S

D

Circuit Symbol

S

G

D

Part #

Description

CPC3710C

N-Channel Depletion Mode FET, SOT-89 Pkg.

Cut-Tape, Available in Quantities of 200, 300,

400, 500, and 600

CPC3710CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)