www.clare.com

DS-CPC3701-R02

1

CPC3701

60V, Depletion-Mode, N-Channel

Vertical DMOS FET

RoHS

2002/95/EC

Pb

Part #

Description

CPC3701C

N-Channel Depletion Mode FET, SOT-89 Pkg.

Cut-Tape, Available in Quantities of 200, 300,

400, 500, and 600

CPC3701CTR

N-Channel Depletion Mode FET, SOT-89 Pkg.

Tape and Reel (1000/Reel)

V

V

(BR)DGX

R

DS(on)

(max)

I

Package

60V

1



600mA

SOT-89

Applications

Features

Description

Ordering Information

Circuit Symbol

DS(on)

at Cold Temperatures

 max. at 25ºC

The CPC3701 is an N-channel, depletion mode, field

effect transistor (FET) that utilizes Clare’s proprietary

third-generation vertical DMOS process. The

third-generation process realizes world class, high

voltage MOSFET performance in an economical

silicon gate process. Our vertical DMOS process

yields a robust device, with high input impedance,

for use in high-power applications. The CPC3701

is a highly reliable FET device that has been used

extensively in Clare’s Solid State Relays for industrial

and security applications.

The CPC3701 has a minimum breakdown voltage of

60V, and is available in the SOT-89 package. As with

all MOS devices, the FET structure prevents thermal

runaway and thermal-induced secondary breakdown.

Package Pinout (SOT-89)

S

G

D

G

D

S

D