UTT4425

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-562.a

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

Gate-Source Voltage

±25

V

-14

Continuous

(Note 2)

-11

Drain Current

Pulsed (Note 3)

-50

A

3.1

Power Dissipation (Note 2)

2

W

Junction Temperature

+150

°C

Storage Temperature

-55~+150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient (Note 2)

75

°C/W

Note: 1 Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

The current rating is based on the t ≤ 10s thermal resistance rating.

3. Repetitive rating, pulse width limited by junction temperature.