UTT75P03

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

-30

V

Gate-Source Voltage

±20

V

-75 (Note 2)

A

Continuous

-65

A

Drain Current

Pulsed

-240

A

Avalanche Current

-60

A

Repetitive Avalanche Energy (Note 3)

L=0.1mH

180

mJ

Power Dissipation

187

W

Junction Temperature

-55~175

°C

Storage Temperature

-55~175

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Package limited.

3. Duty cycle≤1%.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

0.8

°C/W