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UTT50P06 датащи(PDF) 2 Page - Unisonic Technologies |
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UTT50P06 датащи(HTML) 2 Page - Unisonic Technologies |
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2 / 3 page ![]() UTT50P06 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 2 of 3 www.unisonic.com.tw QW-R502-596.a ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS -60 V Gate-Source Voltage VGSS ±20 V TC=25°C -50 (Note 5) A Continuous (TJ=175°C) TC=125°C ID -27.5 A Drain Current Pulsed IDM -80 A Avalanche Current IAR -50 A Single Pulse Avalanche Energy (Note 2) L=0.1mH EAS 125 mJ TC=25°C 113 (Note 4) Power Dissipation TA=25°C PD 2.5 (Note 3, 4) W Junction Temperature TJ -55~+150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Duty cycle≤1%. 3. When Mounted on 1" square PCB (FR-4 material). 4. See SOA curve for voltage derating. 5. Package limited. THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS UNIT t≤10s 18 Junction to Ambient (Note 3) Steady State θJA 50 Junction to Case θJC 1.1 °C/W |
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