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UTT50N05L-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UTT50N05L-TN3-R
подробное описание детали  50A, 50V N-CHANNEL ENHANCEMENT MODE POWER MOSFET TRANSISTOR
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT50N05L-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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UTT50N05
Preliminary
Power MOSFE
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-663.a
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
50
V
Gate-Source Voltage
VGSS
±20
V
Continuous
ID
50
A
Drain Current
Pulsed
IDM
200
A
Single Pulsed
EAS
400
mJ
Avalanche Energy
Repetitive
EAR
100
mJ
Power Dissipation
PD
113
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
100
°C/W
Junction to Case
θJC
1.1
°C/W
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
50
V
Drain-Source Leakage Current
IDSS
VDS=100V, VGS=0V
10
µA
Forward
VGS=+20V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
2
4
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
18
23
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
900
1220
pF
Output Capacitance
COSS
430
550
pF
Reverse Transfer Capacitance
CRSS
VGS=0V, VDS=25V, f=1.0MHz
80
100
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
30
40
nC
Gate to Source Charge
QGS
9.6
nC
Gate to Drain Charge
QGD
VGS=10V, VDS=30V, ID=50A,
IG=3.33mA
10
nC
Turn-ON Delay Time
tD(ON)
40
60
ns
Rise Time
tR
100
200
ns
Turn-OFF Delay Time
tD(OFF)
90
180
ns
Fall-Time
tF
VDD=30V, ID=15A, RG=2.5Ω,
VGS=10V
80
160
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
50
A
Maximum Body-Diode Pulsed Current
ISM
200
A
Drain-Source Diode Forward Voltage
VSD
IS=50A, VGS=0V
1.5
V



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