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UTT40N03G-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UTT40N03G-TN3-R
подробное описание детали  40A, 30V N-CHANNEL POWER MOSFET
PDF  5 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UTT40N03G-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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UTT40N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-689.B
ABSOLUTE MAXIMUM RATINGS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
40
A
Pulsed (Note 1)
IDM
160
A
Power Dissipation
PD
50
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
62
°C/W
Junction to Case
θJC
2.5
°C/W
ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
30
V
Drain-Source Leakage Current
IDSS
VDS =30 V, VGS =0 V, TJ=25°C
1
µA
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V
+100
nA
Reverse
VGS=-20V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
1
3
V
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=20A
14
17
mΩ
VGS=4.5V, ID=16A
20
23
mΩ
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25 V, VGS =0V, f=1.0MHz
800
pF
Output Capacitance
COSS
380
pF
Reverse Transfer Capacitance
CRSS
133
pF
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS =24V, VGS =5 V, ID =20A
17
nC
Gate to Source Charge
QGS
3
nC
Gate to Drain Charge
QGD
10
nC
Turn-ON Delay Time
tD(ON)
VDS =15 V, ID=20 A, VGS =10V,
RG =3.3 Ω, RL =0.75 Ω
7.2
ns
Rise Time
tR
60
ns
Turn-OFF Delay Time
tD(OFF)
22.5
ns
Fall-Time
tF
10
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
VD=VG=0V , VS=1.3V
40
A
Maximum Body-Diode Pulsed Current
ISM
160
A
Drain-Source Diode Forward Voltage
VSD
TJ=25°C, IS=40A, VGS=0V
1.3
V
Notes: 1. Pulse width limited by TJ(MAX)
2. Pulse width ≤300us, duty cycle ≤2%.



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