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UTT10N10L-TN3-R датащи(PDF) 1 Page - Unisonic Technologies |
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UTT10N10L-TN3-R датащи(HTML) 1 Page - Unisonic Technologies |
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1 / 3 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT10N10 Preliminary Power MOSFET www.unisonic.com.tw 1 of 3 Copyright © 2011 Unisonic Technologies Co., Ltd QW-R502-714.a 10A, 100V N-CHANNEL MOSFET DESCRIPTION The UTC UTT10N10 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and ultra low gate charge. It also can withstand high energy pulse in the avalanche and commutation mode. FEATURES * RDS(on) =142mΩ @VGS = 10 V,ID=6.4A * High Switching Speed * Low CRSS (Typically 20pF) * Low Gate Charge(Typically 12nC) SYMBOL ORDERING INFORMATION Ordering Number Package Pin Assignment Packing Lead Free Halogen Free 1 2 3 UTT10N10L-TN3-R UTT10N10G-TN3-R TO-252 G D S Tape Reel UTT10N10L-TN3-T UTT10N10G-TN3-T TO-252 G D S Tube Note: Pin Assignment: G: Gate D: Drain S: Source |
Аналогичный номер детали - UTT10N10L-TN3-R |
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Аналогичное описание - UTT10N10L-TN3-R |
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