UTM4953L-S08-R datasheet(3/4 Pages) UTC

3 / 4 page

UTM4953

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 4

www.unisonic.com.tw

QW-R502-293.B

ABSOLUTE MAXIMUM RATINGS (TA=25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

-30

Gate-Source Voltage

VGSS

±25

Drain Current

Continuous

-4.9

Pulsed

IDM

-30

Power Dissipation

2.5

Junction Temperature

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

θJA

°C/W

ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

BVDSS

VGS=0V, ID=-250µA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-24V, VGS=0V

-1

µA

Gate-Body Leakage Current

IGSS

VDS=0V, VGS=±25V

±100

ON CHARACTERISTICS

Gate Threshold Voltage

VGS(TH)

VDS=VGS, ID=-250µA

-1

-1.5

-2

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-4.9A

mΩ

VGS=-4.5V, ID=-3.6A

DYNAMIC PARAMETERS

Input Capacitance

CISS

VDS=-25V, VGS=0V, f=1.0MHz

1260

Output Capacitance

COSS

340

Reverse Transfer Capacitance

CRSS

220

SWITCHING PARAMETERS

(Note)

Turn-ON Delay Time

tD(ON)

VGEN=-10V, VDD=-15V, RL=7.5Ω,

RG=6Ω, ID=-2A

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

Total Gate Charge

VDS=-15V, VGS=-10V, ID=-4.6A

22.3

Gate Source Charge

QGS

4.65

Gate Drain Charge

QGD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Diode Forward Voltage

VSD

ISD=-1.7A, VGS=0V

-0.7

-1.3

Note: Pulse width≦300µs, Duty cycle≦2%

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