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UT9435HZG-S08-R датащи(PDF) 3 Page - Unisonic Technologies

номер детали UT9435HZG-S08-R
подробное описание детали  P-CHANNEL ENHANCEMENT MODE
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT9435HZG-S08-R датащи(HTML) 3 Page - Unisonic Technologies

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UT9435HZ
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-740.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source Voltage
VDSS
-30
V
Gate to Source Voltage
VGSS
±20
V
Continuous Drain Current (Note 3)
ID
±5.3
A
Pulsed Drain Current (Note 1, 2)
IDM
±20
A
Power Dissipation
PD
2.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient
θJA
50
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS=0V, ID=-250µA
-30
V
Drain-Source Leakage Current
IDSS
VDS=-30V,VGS=0V
-1
µA
Gate-Source Leakage Current
IGSS
VDS=0V ,VGS=±20V
±5
µA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
-3
V
Drain-Source On-State Resistance (Note 2)
RDS(ON)
VGS=-10V,ID=-5.3A
44
50
mΩ
VGS=-4.5V, ID=-4.2A
74
90
mΩ
On State Drain Current
ID(ON)
VDS=-5V, VGS=-10V
-20
V
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=-15V,VGS=0V,
f=1.0MHz
1040
pF
Output Capacitance
COSS
420
pF
Reverse Transfer Capacitance
CRSS
150
pF
SWITCHING PARAMETERS
Total Gate Charge (Note 2)
QG
VDS=-15V,VGS=-10V,
ID=-4.6A
22.5
29
nC
Gate-Source Charge
QGS
2
nC
Gate-Drain Charge
QGD
6
nC
Turn-ON Delay Time (Note 2)
tD(ON)
VDD=-15V, ID=-1A,
VGEN=-10V, RG=6Ω,
19
26
ns
Turn-ON Rise Time
tR
9
13
ns
Turn-OFF Delay Time
tD(OFF)
74
105
ns
Turn-OFF Fall Time
tF
36
50
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage (Note 2)
VSD
VGS=0V, IS =-5.3A
-0.84
-1.3
V
Notes: 1. Pulse width limited by TJ(MAX).
2. Pulse width ≤300μs, duty cycle ≤2%.
3. Surface Mounted on 1in
2 copper pad of FR4 board



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