поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

UT3443G-AG6-R датащи(PDF) 3 Page - Unisonic Technologies

номер детали UT3443G-AG6-R
подробное описание детали  P-CHANNEL 2.5-V (G-S) MOSFET
PDF  4 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3443G-AG6-R датащи(HTML) 3 Page - Unisonic Technologies

  UT3443G-AG6-R Datasheet HTML 1Page - Unisonic Technologies UT3443G-AG6-R Datasheet HTML 2Page - Unisonic Technologies UT3443G-AG6-R Datasheet HTML 3Page - Unisonic Technologies UT3443G-AG6-R Datasheet HTML 4Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 3 / 4 page
background image
UT3443
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 4
www.unisonic.com.tw
QW-R502-557.a
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-20
V
Gate-Source Voltage
VGSS
±12
V
TA=25°C
-4.5
Continuous
TJ =150°C (Note 2)
TA=70°C
ID
-3.6
Drain Current
Pulsed
IDM
-20
A
Power Dissipation (Note 2)
TA=25°C
PD
1.1
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1)
θJA
110
°C/W
Note: 1. Surface Mounted on FR4 Board, t≤5 sec
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
VDS=-20V, VGS=0V
-1
Drain-Source Leakage Current
IDSS
VDS=-20V, VGS=0V, TC=70°C
-5
µA
Forward
VGS=+12V, VDS=0V
+100
nA
Gate- Source Leakage Current
Reverse
IGSS
VGS=-12V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-0.6
-1.4
V
VGS=-4.5V, ID=-4.5A
0.050 0.065
VGS=-2.7V, ID=-3.8A
0.070 0.090
Static Drain-Source On-State Resistance
(Note 2)
RDS(ON)
VGS=-2.5V, ID=-3.7A
0.080 0.100
Ω
SWITCHING PARAMETERS
(Note 3)
Total Gate Charge
QG
7.3
15
nC
Gate to Source Charge
QGS
2.0
nC
Gate to Drain Charge
QGD
VGS=-4.5V, VDS=-10V, ID=-4.5A
1.9
nC
Gate Resistance
Rg
3
15
Ω
Turn-ON Delay Time
tD(ON)
15
50
ns
Rise Time
tR
32
60
ns
Turn-OFF Delay Time
tD(OFF)
50
100
ns
Fall-Time
tF
VDD=-10V, ID≈-1.0A,
VGEN=-4.5V, RL=10Ω, RG=6Ω
45
80
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
(Note 2)
VSD
IS=-1.7A, VGS=0V
-0.8
-1.2
V
Body Diode Reverse Recovery Time
tRR
IF=-1.7A, di/dt=100A/µs
35
80
ns
Notes: 2. Pulse test; pulse width ≤300μs, duty cycle ≤2%.
3. Guaranteed by design, not subject to production testing.



Html Pages

1 2 3 4


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com