UT3416L-AE3-R datasheet(1/3 Pages) UTC

номер детали	UT3416L-AE3-R

подробное описание детали	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	3 Pages

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производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT3416

Preliminary

Power MOSFET

www.unisonic.com.tw

1 of 3

QW-R502-325.c

N-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UTC UT3416 is advanced n-channel enhancement

MOSFET which can provide the designer with the best combination

of excellent RDS (ON), low gate charge and low gate voltages as low

as 1.8V.When it is used as a load switch or in PWM application, the

UTC UT3416 can be considered as an ideal.

FEATURES

* VDS =20 V

* ID =6.5 A

* RDS(ON)<22 mΩ @VGS = 4.5 V

* RDS(ON) <26 mΩ @VGS = 2.5 V

* RDS(ON) <34 mΩ @VGS = 1.8 V

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3416L-AE3-R

UT3416G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34S

L: Lead Free

G: Halogen Free

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UT3416L-AE3-R датащи(PDF) 1 Page - Unisonic Technologies

UT3416L-AE3-R датащи(HTML) 1 Page - Unisonic Technologies

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Аналогичное описание - UT3416L-AE3-R

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