UT3414L-AE3-R datasheet(1/4 Pages) UTC

номер детали	UT3414L-AE3-R

подробное описание детали	N-CHANNEL ENHANCEMENT MODE

PDF	4 Pages

Scroll/Zoom	100%

производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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1 / 4 page

UNISONIC TECHNOLOGIES CO., LTD

UT3414

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-248.E

N-CHANNEL ENHANCEMENT

MODE

DESCRIPTION

The UT3414 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with gate voltages

as low as 1.8V. This device is suitable for use as a load switch or in

PWM applications.

FEATURES

* RDS(ON) < 50mΩ @VGS = 4.5V

* RDS(ON) < 63mΩ @VGS = 2.5V

* RDS(ON) < 87mΩ @VGS = 1.8V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT3414L-AE3-R

UT3414G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

34Q

L: Lead Free

G: Halogen Free

Аналогичный номер детали - UT3414L-AE3-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	UT3414G-AE3-R	222Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Unisonic Technologies	UT3414	222Kb / 4P	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Аналогичное описание - UT3414L-AE3-R

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UT3414L-AE3-R датащи(PDF) 1 Page - Unisonic Technologies

UT3414L-AE3-R датащи(HTML) 1 Page - Unisonic Technologies

Аналогичный номер детали - UT3414L-AE3-R

Аналогичное описание - UT3414L-AE3-R

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