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UT3400G-AE3-R датащи(PDF) 3 Page - Unisonic Technologies

номер детали UT3400G-AE3-R
подробное описание детали  N-CHANNEL ENHANCEMENT MODE POWER MOSFET
PDF  3 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3400G-AE3-R датащи(HTML) 3 Page - Unisonic Technologies

  UT3400G-AE3-R Datasheet HTML 1Page - Unisonic Technologies UT3400G-AE3-R Datasheet HTML 2Page - Unisonic Technologies UT3400G-AE3-R Datasheet HTML 3Page - Unisonic Technologies  
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UT3400
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
3 of 3
www.unisonic.com.tw
QW-R502-371.A
TYPICAL CHARACTERISTICS
Drain Current vs. Drain-Source
Breakdown Voltage
0
Drain-Source Breakdown Voltage, BVDSS(V)
10
0
0.5
0
0
50
Drain Current vs. Gate Threshold Voltage
Gate Threshold Voltage, VTH (V)
1.5
100
150
200
250
300
50
150
200
250
300
100
1.0
20
30
40
50
0
Drain Current vs. Source to Drain Voltage
Source to Drain Voltage, VSD (V)
0
0.2
0
Drain-Source On-State Resistance
Characteristics
Drain to Source Voltage, VDS (mV)
0
0.4
0.6
0.8
0.2
150
200
1
4
6
0.4
0.6
0.8
1.0
3
5
VGS=10V
ID=5.8A
VGS=2.5V
ID=4A
VGS=4.5V
ID=5A
2
7
50
100
250
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.



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