UT2321G-AE3-R datasheet(1/4 Pages) UTC

номер детали	UT2321G-AE3-R

подробное описание детали	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

PDF	4 Pages

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производитель	UTC [Unisonic Technologies]

домашняя страница	http://www.utc-ic.com

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UNISONIC TECHNOLOGIES CO., LTD

UT2321

Power MOSFET

www.unisonic.com.tw

1 of 4

QW-R502-249.D

P-CHANNEL ENHANCEMENT

MODE FIELD EFFECT

TRANSISTOR

DESCRIPTION

The UT2321 uses advanced trench technology to provide

excellent RDS(ON), low gate charge and operation with low gate

voltages. This device is suitable for use as a load switch or in PWM

applications.

FEATURES

* RDS(ON)<55mΩ @VGS=-4.5V

* RDS(ON)<80mΩ @VGS=-2.5V

* Low capacitance

* Low gate charge

* Fast switching capability

* Avalanche energy specified

SYMBOL

2.Gate

1.Source

3.Drain

ORDERING INFORMATION

Ordering Number

Pin Assignment

Lead Free

Halogen Free

Package

1

2

3

Packing

UT2321L-AE3-R

UT2321G-AE3-R

SOT-23

S

G

D

Tape Reel

MARKING

231

L: Lead Free

G: Halogen Free

Аналогичный номер детали - UT2321G-AE3-R

производитель	номер детали	датащи	подробное описание детали
Unisonic Technologies	UT2321G-AE3-R	251Kb / 4P	P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

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Аналогичное описание - UT2321G-AE3-R

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UT2321G-AE3-R датащи(PDF) 1 Page - Unisonic Technologies

UT2321G-AE3-R датащи(HTML) 1 Page - Unisonic Technologies

Аналогичный номер детали - UT2321G-AE3-R

Аналогичное описание - UT2321G-AE3-R

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