UT2274 datasheet(2/3 Pages) UTC

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UT2274

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R213-019.d

ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

1400

Collector-Emitter Voltage

VCEO

720

Emitter-Base Voltage

VEBO

Collector Current

Pulse (Note 2)

ICP

TO-251

Collector Dissipation

TO-92

625

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. PW≤300μs, duty cycle≤10%

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Base Breakdown Voltage

BVCBO

IC=1 mA, IE =0A

1400

Collector-Emitter Breakdown Voltage

BVCEO

IC=5 mA, RBE =∞

720

Emitter-Base Breakdown Voltage

BVEBO

IE =1 mA, IC =0A

Collector Cut-off Current

ICBO

VCB=800 V, IE =0A

μA

Collector Cut-off Current

ICES

VCB=1400 V, RBE =0Ω

Emitter Cut-off Current

IEBO

VEB=4V, IC =0A

Collector-Emitter Saturation Voltage

VCE(SAT)

IC=0.25 A, IB=0.05 A

1.5

Base-Emitter Saturation Voltage

VBE(SAT)

IC=0.5 A, IB=0.1 A

1.5

hFE1

VCE =5V, IC=0.1 A

DC Current Gain

hFE2

VCE =5V, IC=0.5 A

Storage Time

tSTG

1.5

3.0

μs

Fall Time

VCC=200V, RL=400Ω

IC=0.5A,IB1=0.1A,IB2=-0.25A,

0.25

0.4

μs

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