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UT100N03 датащи(PDF) 2 Page - Unisonic Technologies

номер детали UT100N03
подробное описание детали  100A, 30V N-CHANNEL POWER MOSFET
PDF  5 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT100N03 датащи(HTML) 2 Page - Unisonic Technologies

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UT100N03
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 5
www.unisonic.com.tw
QW-R502-193.D
ABSOLUTE MAXIMUM RATINGS (TC =25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current
ID
100
A
Pulsed Drain Current (Note 2)
IDM
400
A
Single Pulsed Avalanche Current (Note 3)
IAS
35
A
Single Pulsed Avalanche Energy (Note 3)
EAS
875
mJ
TO-220/TO-263
100
Power Dissipation
TO-251
50
W
TO-220/TO-263
0.67
Derate above 25℃
TO-251
PD
0.4
W/℃
Junction Temperature
TJ
+175
℃
Strong Temperature
TSTG
-55 ~ +175
℃
Note:
1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Pulse width limited by maximum junction temperature
3. L = 0.5mH, IAS = 35A, VDD = 25V, RG = 25Ω, Starting TJ = 25℃.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
TO-220/TO-263
62.5
Junction to Ambient
TO-251
θJA
110
℃
/W
TO-220/TO-263
1.5
Junction to Case
TO-251
θJC
2.5
℃
/W
ELECTRICAL CHARACTERISTICS (TJ =25℃, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0 V, ID =250 µA
30
V
Drain-Source Leakage Current
IDSS
VDS=30 V,VGS =0 V
1
µA
Gate-Source Leakage Current
IGSS
VDS =0 V, VGS = ±20 V
±100
nA
ON CHARACTERISTICS
(Note2)
Gate Threshold Voltage
VGS(TH)
VDS =VGS, ID =250 µA
1
3
V
VGS =10 V, ID =50 A
3.05
5.3
Static Drain-Source On-Resistance
RDS(ON)
VGS =4.5 V, ID =40 A
4.2
8
mΩ
DYNAMIC PARAMETERS
(Note3)
Input Capacitance
CISS
9500
Output Capacitance
COSS
800
Reverse Transfer Capacitance
CRSS
VDS =15V, VGS =0V, f=1.0MHz
300
pF
SWITCHING PARAMETERS
(Note3)
Total Gate Charge
QG
50
65
Gate Source Charge
QGS
20.8
Gate Drain Charge
QGD
VDS =15V, VGS =5V, ID =16A
19
nC
Turn-ON Delay Time
tD(ON)
25.7
50
Turn-ON Rise Time
tR
10
20
Turn-OFF Delay Time
tD(OFF)
128
200
Turn-OFF Fall-Time
tF
VDD=15V, ID =1A, RGEN =6Ω
VGS =10 V
34
70
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=20 A,VGS=0 V
1.5
V
Drain-Source Diode Forward Current
IS
90
A
Note:
1. Pulse Test : Pulse Width < 300μs, Duty Cycle < 2%.
2. Guaranteed by design, not subject to production testing.



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