поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

UT3P06 датащи(PDF) 2 Page - Unisonic Technologies

номер детали UT3P06
подробное описание детали  3A, 60V (D-S) P-CHANNEL POWER MOSFET
PDF  3 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UT3P06 датащи(HTML) 2 Page - Unisonic Technologies

  UT3P06 Datasheet HTML 1Page - Unisonic Technologies UT3P06 Datasheet HTML 2Page - Unisonic Technologies UT3P06 Datasheet HTML 3Page - Unisonic Technologies  
Zoom Inzoom in Zoom Outzoom out
 2 / 3 page
background image
UT3P06
Preliminary
Power MOSFET
UNISONICTECHNOLOGIESCO.,LTD
2 of 3
www.unisonic.com.tw
QW-R502-673.b
ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
-60
V
Gate-Source Voltage
VGSS
±20
V
Drain Current
Continuous
ID
-3
A
Pulsed
IDM
-10
A
Avalanche Current (L=0.1mH)
IAR
-7
A
Power Dissipation (Note 1, 2)
PD
3.5
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Surface Mounted on FR4 Board.
3. t≤5 sec
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note 1,2)
θJA
62.5
°C/W
Junction to Case
θJC
35
°C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
ID=-250µA, VDS=0V
-60
V
Drain-Source Leakage Current
IDSS
VDS=-48V, VGS=0V
-1
µA
VDS=-48V, VGS=0V , TJ=150°C
-50
Gate- Source Leakage Current
Forward
IGSS
VGS=+20V, VDS=0V
+100
nA
Reverse
VGS=-20V, VDS=0V
-100
nA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=-250µA
-1
V
Static Drain-Source On-State Resistance
(Note 1)
RDS(ON)
VGS=-10V, ID=-3A
190
220
mΩ
VGS=-4.5V, ID=-1.9A
265
310
On State Drain Current (Note 1)
ID(ON)
VGS=-10V, VDS=-5V
-10
A
SWITCHING PARAMETERS
(Note 2)
Total Gate Charge
QG
VGS=-10V, VDS=-30V, ID=-3A
7
14
nC
Gate to Source Charge
QGS
1.6
nC
Gate to Drain Charge
QGD
1.2
nC
Turn-ON Delay Time
tD(ON)
VDD=-30V, VGEN=-10V, ID=-1A,
RL=30 Ω , RG=6Ω
8
16
ns
Rise Time
tR
12
24
ns
Turn-OFF Delay Time
tD(OFF)
23
45
ns
Fall-Time
tF
12
25
ns
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
(Note 2)
Maximum Body-Diode Continuous Current
IS
-1.7
A
Maximum Body-Diode Pulsed Current
ISM
-10
A
Drain-Source Diode Forward Voltage
VSD
IS=-3A, VGS=0V (Note 1)
-0.8
-1.2
V
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%.
2. Guaranteed by design, not subject to production testing.



Html Pages

1 2 3


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com