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USS4450G-TN3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали USS4450G-TN3-R
подробное описание детали  50V, 5A NPN LOW VCE(SAT) TRANSISTOR
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

USS4450G-TN3-R датащи(HTML) 2 Page - Unisonic Technologies

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USS4450
NPN SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R209-026.A
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
60
V
Collector-Emitter Voltage
VCEO
50
V
Emitter-Base Voltage
VEBO
6
V
DC
IC
3
A
Collector Current
Peak
ICM
5
A
Peak Base Current
IBM
1
A
Power Dissipation (TC=25°C) (Note 2)
PD
1.4
W
Junction Temperature
TJ
150
°C
Operating Temperature
TOPR
+150
°C
Storage Temperature
TSTG
-65 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Ambient (Note)
θJA
62.5
°C/W
Notes Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm
2.
For other mounting conditions see “Thermal considerations for TO-252 in the General Part of associated
Handbook”.
ELECTRICAL CHARACTERISTICS TA = 25 °C unless otherwise specified.
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
VCB = 50 V, IE =0
100
nA
Collector-Base Cut-Off Current
ICBO
VCB = 50 V, IE = 0, TJ = 150 °C
50
μ
A
Emitter-Base Cut-Off Current
IEBO
VEB =5V, IC =0
100
nA
VCE =2V, IC = 500 mA
200
VCE =2V, IC = 1 A, (Note 1)
200
DC Current Gain
hFE
VCE =2V, IC = 2 A, (Note 1)
100
IC = 500 mA, IB =50mA
90
mV
IC = 1 A, IB =50mA
170
mV
Collector-Emitter Saturation voltage
VCEsat
IC = 2 A, IB = 200 mA, (Note 1)
290
mV
Equivalent On-Resistance
RCEsat
IC = 2 A, IB = 200 mA, (Note 1)
110 145
mΩ
Base-Emitter Saturation voltage
VBEsat
IC = 2 A, IB = 200 mA, (Note 1)
1.2
V
Base-Emitter Turn-On Voltage
VBEon
VCE =2V, IC = 1 A, (Note 1)
1.1
V
Transition Frequency
fT
IC = 100 mA, VCE = 5 V, f = 100 MHz
100
MHz
Collector Capacitance
Cc
VCB = 10 V, IE =Ie = 0, f = 1 MHz
30
pF
Note 1. Pulse test: tp≤300 μs, δ≤0.02.
TYPICAL CHARACTERISTICS



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