DTA113T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 3

www.unisonic.com.tw

QW-R206-091.C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

-50

V

Collector-Emitter Voltage

-50

V

Emitter-Base Voltage

-6

V

Collector Current

-100

mA

Peak Collector Current

-200

mA

Collector Power Dissipation

150

mW

Junction Temperature

150

°C

Storage Temperature

-55~+150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Collector-Emitter Breakdown Voltage

-50

V

Collector-Emitter Saturation Voltage

-0.3

V

Collector Cut-off Current

-0.1

μA

DC Current Gain

100

Input Resistance

0.7

1.0

1.3

kΩ

Current Gain Bandwidth Product

150

MHz