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UP1853G-AA3-R датащи(PDF) 2 Page - Unisonic Technologies

номер детали UP1853G-AA3-R
подробное описание детали  HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
PDF  4 Pages
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производитель  UTC [Unisonic Technologies]
домашняя страница  http://www.utc-ic.com
Logo UTC - Unisonic Technologies

UP1853G-AA3-R датащи(HTML) 2 Page - Unisonic Technologies

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UP1853
PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD
2 of 4
www.unisonic.com.tw
QW-R207-019.C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-140
V
Collector-Emitter Voltage
VCEO
-100
V
Emitter-Base Voltage
VEBO
-6
V
Peak Pulse Current
ICM
-10
A
Continuous Collector Current
IC
-5
A
Power Dissipation (TA=25°C)
PD
3
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector-Base Breakdown Voltage
BVCBO
IC=-100μ A
-140
-170
V
Collector-Emitter Breakdown Voltage
BVCER
IC=-1μA, RB≦1KΩ
-140
-170
V
Collector-Emitter Breakdown Voltage
BVCEO
IC=-10mA (Note)
-100
-120
V
Emitter-Base Breakdown Voltage
BVEBO
IE=-100μA
-6
-8
V
Collector Cut-Off Current
ICBO
VCB=-100V
-200
nA
Collector Cut-Off Current
ICER
VCB=-100V, R≤1kΩ
-200
nA
Emitter Cut-Off Current
IEBO
VEB=-6V
-50
nA
Collector-Emitter Saturation Voltage
VCE(SAT)
(Note)
IC=-100mA, IB=-10mA
-20
-50
mV
IC=-1A, IB=-100mA
-90
-115
IC=-2A, IB=-200mA
-160
-220
IC=-4A, IB=-400mA
-300
-420
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-4A, IB=-400mA (Note)
-1010 -1170
mV
Base-Emitter Turn-On Voltage
VBE(ON)
IC=-4A, VCE=-1V (Note)
-925
-1160
mV
DC Current Gain
hFE
(Note)
IC=-10mA, VCE=-1V
100
200
IC=-1A, VCE=-1V
100
200
300
IC=-3A, VCE=-1V
50
90
IC=-4A, VCE=-1V
30
50
IC=-10A, VCE=-1V
15
Transition Frequency
fT
IC=-100mA, VCE=-10V f=50MHz
125
MHz
Output Capacitance
COB
VCB=-10V, f=1MHz
65
pF
Switching Times
tON
IC=-2A, IB1=-200mA, IB2=200mA,
VCC=-10V
110
ns
tOFF
460
Note: Pulse width=300μs. Duty cycle≤2%



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