UH8100AL-AE3-R datasheet(4/6 Pages) UTC

4 / 6 page

UH8100

CMOS IC

UNISONICTECHNOLOGIESCO.,LTD

4 of 6

www.unisonic.com.tw

QW-R502-413.C

ABSOLUTE MAXIMUM RATING (T

A=25℃)

PARAMETER

SYMBOL

RATINGS

UNIT

Magnetic Flux Density

Unlimited

Supply Voltage

VDD

Output Current

Package Power Dissipation

230

Junction Temperature

150

℃

Operation Temperature

TOPR

-40 ~ +85

℃

Storage Temperature

TSTG

-65 ~ +150

℃

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

RECOMMENDED OPERATING CONDITIONS (T

A=25℃)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Supply Voltage

VDD

Operating

2.5

5.5

ELECTRICAL CHARACTERISTICS (T

A=25℃)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNIT

Output On Voltage

VOUT

VDD=3V, IOUT=1mA

0.1

0.3

Output Leakage Current

IOFF

VDD=3V, VOUT=5.5V, B<BRP

<0.1

Supply Current

IDD(EN)

VDD=3V, Chip enable

2.0

Supply Current

IDD(DIS)

VDD=3V, Chip disable

IDD(AVG)

VDD=3V,

average supply current

UH8100A

UH8100B

280

500

Awake Time

TAWAKE

VDD=3V

100

Period

TPERIOD

VDD=3V,UH8100A

100

VDD=3V,UH8100B

200

400

Duty Cycle

D.C.

VDD=3V,UH8100A

0.1

VDD=3V,UH8100B

MAGNETIC CHARACTERISTICS ( T

A=25℃,VDD=3V)

PARAMETER

SYMBOL

MIN

TYP

MAX

UNIT

Operation Points

|BOP|

Gauss

Release Points

|BRP|

Hysteresis

|BOP–BRP|

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