UF640G-TN3-R datasheet(3/5 Pages) UTC

3 / 5 page

UF640

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

3 of 5

www.unisonic.com.tw

QW-R502-066.E

ELECTRICAL CHARACTERISTICS(Cont.) (TC = 25 ,

℃

unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

SWITCHING PARAMETERS

Turn-ON Delay Time

tD(ON)

VDD=100V,ID≈18A, RG=9.1Ω,RL=5.4Ω,

MOSFET

Switching

Times

are

Essentially Independent of Operating

Temperature

Turn-ON Rise Time

Turn-OFF Delay Time

tD(OFF)

Turn-OFF Fall-Time

Total Gate Charge

QG(TOT)

VGS=10V, ID≈18A, VDS=0.8 x Rated

BVDSS Gate Charge is Essentially

Independent

Operating

Temperature IG(REF) = 1.5mA

Gate Source Charge

QGS

Gate Drain Charge

QGD

ELECTRICAL CHARACTERISTICS(Cont.)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Internal Drain Inductance

Measured From

the Contact Screw

on Tab to

Center of Die

Modified MOSFET

Symbol Showing

the Internal

Devices

Inductances

3.5

Measured From

the Drain Lead,

6mm (0.25in)

From Package to

Center of Die

4.5

Internal Source Inductance

Measured From

the Source Lead,

6mm (0.25in) from

Header to Source

Bonding Pad

7.5

SOURCE TO DRAIN DIODE SPECIFICATIONS

Diode Forward Voltage (Note)

VSD

TJ = 25℃, IS = 18A, VGS = 0V,

2.0

Continuous Source Current

(body diode)

Integral Reverse p-n Junction

Diode in the MOSFET

Gate

Sourse

Drain

Pulse Source Current (body diode)

(Note)

ISM

Reverse Recovery Time

trr

TJ=25℃, IS=18A, dIS/dt=100A/μs

120

240

530

Reverse Recovery Charge

QRR

TJ=25℃, IS=18A, dIS/dt=100A/μs

1.3

2.8

5.6

μC

Note: Pulse Test: Pulse width ≤ 300μs, duty cycle ≤ 2%.

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