MJE2955T

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2

www.unisonic.com.tw

QW-R203-012,C

ABSOLUTE MAXIMUM RATING

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

70

V

Collector-Emitter Voltage

60

V

Emitter-Base Voltage

5

V

Collector current

10

A

Base Current

6

A

Total Power Dissipation (Ta=25°C)

75

W

Junction Temperature

125

°C

Operating Temperature

-20 ~ +85

°C

Storage Temperature

-40 ~ +150

°C

Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. The device is guaranteed to meet performance specification within 0°C ~70°C

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP MAX UNIT

Collector-Emitter Breakdown Voltage

60

V

Collector-Base Breakdown Voltage

70

V

Emitter-Base Breakdown Voltage

5

V

1

mA

700

μA

Collector Cut-Off Current

1

mA

Emitter Cut-Off Current

5

mA

Collector-Emitter Saturation Voltage

1.1

8.0

V

Baser-Emitter on Voltage

1.8

V

DC Current Gain

20

5

100

Current Gain Bandwidth Product

2

MHZ