HE8050

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-018,C

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

40

V

Collector-Emitter Voltage

25

V

Emitter-Base Voltage

6

V

SOT-23

350

mW

SOT-89

500

mW

Collector Dissipation

TO-92/TO-92NL

1

W

Collector Current

1.5

A

Junction Temperature

+150

°C

Storage Temperature

-65 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector-Base Breakdown Voltage

40

V

Collector-Emitter Breakdown Voltage

25

V

Emitter-Base Breakdown Voltage

6

V

Collector Cut-Off Current

100

nA

Emitter Cut-Off Current

100

nA

45

135

85

160

500

DC Current Gain

40

110

Collector-Emitter Saturation Voltage

0.5

V

Base-Emitter Saturation Voltage

1.2

V

Base-Emitter Saturation Voltage

1.0

V

Current Gain Bandwidth Product

100

MHz

Output Capacitance

Cob

f=1MHz

9.0

pF

RANK

C

D

E

RANGE

120-200

160-300

250-500