2SA1020G-X-AB3-R datasheet(2/4 Pages) UTC

2 / 4 page

2SA1020

PNP SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R211-007,D

ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

-50

Collector-Emitter Voltage

VCEO

-50

Emitter-Base Voltage

VEBO

-5

Collector Current

-2

TO-92NL

900

SOT-23

300

Collector Power Dissipation

SOT-89

500

Junction Temperature

150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX UNIT

Collector to Emitter Breakdown Voltage

BVCEO

Ic=-10mA, IB=0

-50

Collector Cut-off Current

ICBO

VCB=-50V, IE=0

-1.0

μA

Emitter Cut-off Current

IEBO

VEB=-5V, IC=0

-1.0

μA

DC Current Gain

hFE1

hFE2

VCE=-2V, IC=-0.5A

VCE=-2V, IC=-1.5A

240

Collector to Emitter Saturation Voltage

VCE(SAT)

Ic=-1A, IB=-0.05A

-0.5

Base to Emitter Saturation Voltage

VBE(SAT)

Ic=-1A, IB=-0.05A

-1.2

Transition Frequency

VCE=-2V, Ic=-0.5A

100

MHz

Collector Output Capacitance

COB

VCB=-10V, IE=0, f=1MHz

Turn-on Time

tON

0.1

μs

Storage Time

tSTG

1.0

μs

Switching Time

Fall Time

0.1

μs

CLASSIFICATION OF hFE1

RANK

RANGE

70 - 140

120 - 240

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