AM9435P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM9435_G

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

-5.7

-5.0

PRODUCT SUMMARY

-30

P-Channel 30-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

SOIC-8 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

1

2

3

4

5

6

7

8

Symbol Maximum Units

-30

±20

o

C

±6.5

o

C

±5.2

±30

-1.6

A

o

C

3.1

o

C

2.0

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

o

C UNLESS OTHERWISE NOTED)

Parame ter

Pulsed Drain Current

b

V

Gate-Source Voltage

Symbol

Maximum

Units

Maximum Junction-to-Case

a

t <= 5 sec

25

Maximum Junction-to-Ambient

a

t <= 10 sec

40

Parameter