AM3471P

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM3471_A

1

These miniature surface mount MOSFETs utilize a

high cell density trench process to provide low

dissipation. Typical applications are DC-DC

converters and power management in portable and

battery-powered products such as computers,

printers, PCMCIA cards, cellular and cordless

telephones.

2.0

1.8

PRODUCT SUMMARY

-100

P-Channel 100-V (D-S) MOSFET

•

extends battery life

•

Low thermal impedance copper leadframe

TSOP-6 saves board space

•

Fast switching speed

•

High performance trench technology

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

Pulse width limited by maximum junction temperature

Symbol Maximum Units

-100

±20

o

C

2.0

o

C

1.6

±8

-2.1

A

o

C

2.0

o

C

1.3

-55 to 150

o

C

Drain-Source Voltage

Continuous Drain Current

a

A

Power Dissipation

a

Operating Junction and Storage Temperature Range

W

Continuous Source Current (Diode Conduction)

a

Paramete r

Pulsed Drain Current

b

V

Gate-Source Voltage

1

2

3

4

5

6

Symbol

Maximum

Units

62.5

110

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

a

t <= 5 sec