NX5521 datasheet(4/8 Pages) RENESAS

номер детали	NX5521

подробное описание детали	LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE

PDF	8 Pages

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производитель	RENESAS [Renesas Technology Corp]

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NX5521 Series

Chapter Title

R08DS0028EJ0100 Rev.1.00

Page 4 of 6

Oct 06, 2010

ELECTRO-OPTICAL CHARACTERISTICS (TC = 25

°C, unless otherwise specified)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Operating Voltage

Vop

Po = 5.0 mW, TC =

−40 to +85°C

1.1

1.5

Threshold Current

Ith

TC = 85

°C

Differential Efficiency

ηd

0.15

0.25

W/A

Center Wavelength

λC

Po = 5.0 mW, RMS (

−20 dB)

TC =

−40 to +85°C

1 480

1 580

Spectral Width

Po = 5.0 mW, RMS (

−20 dB)

TC =

−40 to +85°C

1.5

3.0

Rise Time

10-90%

0.7

Fall Time

90-10%

0.7

Lateral Beam Angle

θ//

Po = 5.0 mW

deg.

Vertical Beam Angle

θ⊥

Po = 5.0 mW

deg.

Monitor Current

VR = 5 V, Po = 5.0 mW

200

1 000

μA

Monitor Dark Current

VR = 5 V

0.1

VR = 5 V, TC =

−40 to +85°C

500

Monitor PD Terminal Capacitance

VR = 5 V, f = 1 MHz

Tracking Error

Im = const. (@ Po = 5.0 mW, TC = 25

°C)

TC =

−40 to +85°C

−1.0

1.0

Tracking Error:

TC = 25

°C

TC = –40 to +85

°C

(mW)

5.0

(mA)

γ = 10 log

[dB]

5.0

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