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2SA1646 датащи(PDF) 2 Page - Renesas Technology Corp |
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2SA1646 датащи(HTML) 2 Page - Renesas Technology Corp |
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2 / 6 page ![]() 2SA1646,2SA1646-Z Chapter Title R07DS0048EJ0200 Rev.2.00 Page 2 of 4 Jul 01, 2010 Electrical Characteristics (Ta = 25 °C) Parameter Symbol Conditions MIN. TYP. MAX. Unit Collector cutoff current ICBO VCB = −100 V, IE = 0 A −10 μA Emitter cutoff current IEBO VEB = −5 V, IC = 0 A −10 μA DC current gain hFE1* 1 VCE = −2 V, IC = −0.5 A 100 − DC current gain hFE2* 1 VCE = −2 V, IC = −2 A 100 400 − DC current gain hFE3* 1 VCE = −2 V, IC = −6 A 60 − Collector saturation voltage VCE(sat)1* 1 IC = −6 A, IB = −0.3 A −0.3 V Collector saturation voltage VCE(sat)2* 1 IC = −8 A, IB = −0.4 A −0.5 V Base saturation voltage VBE(sat)1* 1 IC = −6 A, IB = −0.3 A −1.2 V Base saturation voltage VBE(sat)2 *1 IC = −8 A, IB = −0.4 A −1.5 V Gain bandwidth product fT VCE = −10 V, IC = −0.5 A 150 MHz Collector capacitance Cob VCB = −10 V, IE = 0 A, f = 1 MHz 250 pF Turn-on time ton 0.3 μs Storage time tstg 1.5 μs Fall time tf IC = −6 A, IB1 = −IB2 = −0.3 A, RL = 8.3 Ω, VCC = −50 V Refer to the test circuit. 0.4 μs Note: *1.Pulse test PW ≤ 350 μs, Duty Cycle ≤ 2% hFE Classification Marking M L K hFE2 100 to 200 150 to 300 200 to 400 Switching Time Test Circuit Base current waveform Collector current waveform |
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